Search results for "Thin oxide"
showing 2 items of 2 documents
Study of very thin oxide layers by conversion and Auger electrons
1990
Oxidic layers as thin as 20–30 A on α-Fe and stainless steel are studied by57Fe-DCEMS with K-conversion electrons and ICEMS. No indication of a vanishingf-factor could be found. Mossbauer spectra, recorded by use of LMM-Auger electrons (AEMS) and by electrons emitted with energies below 15 eV (LEEMS), contain information on the surface layer as well as on the bulk material, showing that part of these electrons are due to secondary effects and the high escape depths of K-conversion electrons.
Modeling of differential admittance behaviour of thin amorphous semiconducting film
2012
The understanding of the electronic properties of thin oxide film is an important step toward the understanding of the mechanisms of film dissolution and breakdown as well as for their application in the field of electrolytic capacitors and solar energy conversion. From this point of view the correct location of the characteristic energy levels (flat band potential, Ufb, and conduction (valence) band edge EC (EV)), of a passive film/electrolyte junction is the preliminary task for a deeper understanding of the mechanism of charge transfer at oxide/electrolyte interface. At this aim the most frequently employed method to locate such characteristic energy levels of semiconductor oxide/electro…